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The following electrical characteristics have been determined for both intrinsic and p-type extrinsic gallium antimonide (GaSb) at room temperature: σ (????∙m) –1 n (m–3 ) p (m–3 ) Intrinsic 8.9 × 10^4 8.7 × 10^23 8.7 × 10^23Extrinsic 2.3 × 10^5 7.6 × 10^22 1.0 × 10^25 (p-type)Calculate electron and hole mobilities.

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Answer:

0.5m^2/Vs and 0.14m^2/Vs

Explanation:

To calculate the mobility of electron and mobility of hole for gallium antimonide we have,

[tex]\sigma = n|e|\mu_e+p|e|\mu_h[/tex] (S)

Where

e= charge of electron

n= number of electrons

p= number of holes

[tex]\mu_e=[/tex] mobility of electron

[tex]\mu_h=[/tex]mobility of holes

[tex]\sigma =[/tex] electrical conductivity

Making the substitution in (S)

Mobility of electron

[tex]8.9*10^4=(8.7*10^{23}*(-1.602*10^{-19})*\mu_e)+(8.7*10^{23}*(-1.602*10^{-19})*\mu_h)[/tex]

[tex]0.639=\mu_e+\mu_h[/tex]

Mobility of hole in (S)

[tex]2.3*10^5 = (7.6*10^{22}*(-1.602*10^{-19})*\mu_e)+(1*10^{25}*(-1.602*10^{-19}*\mu_h))[/tex]

[tex]0.1436 = 7.6*10^{-3}\mu_e+\mu_h[/tex]

Then, solving the equation:

[tex]0.639=\mu_e+\mu_h[/tex] (1)

[tex]0.1436 = 7.6*10^{-3}\mu_e+\mu_h[/tex] (2)

We have,

Mobility of electron [tex]\mu_e = 0.5m^2/V.s[/tex]

Mobility of hole is [tex]\mu_h = 0.14m^2/V.s[/tex]

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