A 3" diameter germanium wafer that is 0.020" thick at 300K has 2.272*10^17 Arsenic atoms added to it. What is the resistivity of the wafer? Germanium has 4.42*10^22 atoms/cc, electron and hole mobilities are 3900 and 1900 cm^2/(V*s). What is the resistivity of the Ge in ohm*microns? From other similar questions I see they are not tking into consideration the volume of the wafer plus the unit conversion.

Respuesta :

Explanation:

Formula to calculate resistivity is as follows.

            [tex]\rho = \frac{1}{qN \mu}[/tex]

                       = [tex]\frac{1}{(1.6 \times 10^{-19}) \times 2.72 \times 10^{17} \times 3900}[/tex] ohm/cm

                       = [tex]5.89 \times 10^{-3} ohm/cm[/tex]

As germanium is an intrinsic conductor. Hence, resistivity of Ge is as follows.

             [tex]\rho_{1} = \frac{1}{2qN_{o}\sqrt{\mu_{e}\mu_{r}}}[/tex]

                        = [tex]\frac{1}{2q(N_{A})^{\frac{1}{2}}\sqrt{\mu_{e}\mu_{r}}}[/tex]

                        =  [tex]\frac{1}{2 \times (1.6 \times 10^{-19}) \times (\sqrt{4.42 \times 10^{22}})\sqrt{(3900)(1900)}}[/tex] ohm/cm

                        = 0.546 [tex]ohm (\mu m)^{-1}[/tex]

Thus, we can conclude that resistivity of the Ge is 0.546 [tex]ohm (\mu m)^{-1}[/tex].